Major electrical parameters of the Hf-ITO TFTs include a field-effect mobility (μ FE) of 7.46 cm 2 V −1 s −1, a turn-on voltage (V ON) of 1.10 V, a sub-threshold swing (SS) of 341.18 mV/decade, and an on/off state current ratio (I ON /I OFF) over 10 5. Our work proposes a novel method for developing high-mobility semiconductor oxide films
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The effect of the SnO2 concentration in high density, tin doped indium oxide (ITO) targets on the characteristics of the resulting sputtered ITO films was examined to prepare a useful database for
The ITO exhibits solid solution phase, relatively porous, good crystallinity with a uniform size of 15–20 nm, resulting in a high specific surface area and excellent conductivity. The effects of reaction temperature, calcination temperature on the specific surface area as well as the conductivity of ITO nanoparticles were studied in this paper.
The low-conduction In 4 Sn 3 O 12 phase precipitates when the tin content exceeds 6 at.%. In 4 Sn 3 O 12 is rhombohedral (space group R 3, a =9.4604 (2) Å, and c = 8.8584 (2) Å in a hexagonal basis). There is a cation ordering with octahedral sites fully occupied by tin, the tin sites being equivalent in both highly doped ITO and In 4 Sn 3 O 12.
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